资料下载
×
TLP250 pdf,TLP250 datasheet (A
消耗积分:0 |
格式:rar |
大小:333 |
2008-12-22
孙成红
分享资料个
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: IF=5mA(max.)
• Supply current (ICC): 11mA(max.)
• Supply voltage (VCC): 10−35V
• Output current (IO): ±1.5A (max.)
• Switching time (tpLH/tpHL): 1.5μs(max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file No.E67349
• Option (D4) type
VDE approved: DIN VDE0884/06.92,certificate No.76823
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 4000VPK
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: IF=5mA(max.)
• Supply current (ICC): 11mA(max.)
• Supply voltage (VCC): 10−35V
• Output current (IO): ±1.5A (max.)
• Switching time (tpLH/tpHL): 1.5μs(max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file No.E67349
• Option (D4) type
VDE approved: DIN VDE0884/06.92,certificate No.76823
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 4000VPK
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
评论(0)
发评论
- 相关下载
- 相关文章
