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现代集成电路芯片14nm节点FinFET的制造工艺流程详细资料说明
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2019-04-05
张红专
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14nm节点FinFET工艺流程。（后栅工艺BEOL+FEOL）
流程概述：晶圆材料-隔离—淀积多晶硅—芯轴—鳍硬掩膜（“侧墙”）—刻蚀形成鳍—双阱形成—制作临时辅助栅—补偿隔离—LDD注入—侧墙主隔离—漏源极形成（应变硅技术）—金属硅化物—器件与金属间介质层ILD—置换高k金属栅—钨栓—第一层金属间介质（超低K介质）IMD-1—第一层铜布线—第二层金属间介质（超低K介质）IMD-2—第二层铜布线。..。..多层布线最上层铝布线制作压焊窗口—最上层介质钝化层（光刻压焊/测试焊盘）—测试.
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qu123456
2022-08-22
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夕惕若厉_24923998
2022-06-20
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