数据：
CSD17309Q3 30-V N-Channel NexFET Power MOSFET 数据表 
这款30 V，4.2mΩ的NexFET™功率MOSFET旨在最大限度地降低功率转换应用中的损耗，并针对5 V栅极驱动应用进行了优化。
NexFET是德州仪器的商标
| VDS (V) |
| Configuration |
| Rds(on) Max at VGS=4.5V (mOhms) |
| IDM, Max Pulsed Drain Current (Max) (A) |
| QG Typ (nC) |
| QGD Typ (nC) |
| Package (mm) |
| VGS (V) |
| VGSTH Typ (V) |
| ID, Silicon limited at Tc=25degC (A) |
| ID, package limited (A) |
| Logic Level |
| CSD17309Q3 | CSD17301Q5A | CSD17302Q5A | CSD17303Q5 | CSD17304Q3 | CSD17305Q5A | CSD17306Q5A | CSD17307Q5A | CSD17308Q3 | CSD17310Q5A | CSD17311Q5 | CSD17312Q5 | CSD17313Q2 | CSD17322Q5A | CSD17327Q5A |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| Single | Single | Single | Single | Single | Single | Single | Single | Single | Single | Single | Single | Single | Single | Single |
| 6.3 | 3 | 9 | 2.6 | 8.8 | 3.6 | 4.2 | 12.1 | 11.8 | 5.9 | 2.3 | 1.7 | 32 | 12.4 | 15.5 |
| 112 | 181 | 104 | 200 | 88 | 181 | 155 | 92 | 78 | 134 | 200 | 200 | 20 | 104 | 85 |
| 7.5 | 19 | 5.4 | 18 | 5.1 | 14.1 | 11.8 | 4 | 3.9 | 8.9 | 24 | 28 | 2.1 | 3.6 | 2.8 |
| 1.7 | 4.3 | 1.2 | 4 | 1.1 | 3 | 2.4 | 1 | 0.8 | 2.1 | 5.2 | 6 | 0.4 | 1.1 | 0.8 |
| SON3x3 | SON5x6 | SON5x6 | SON5x6 | SON3x3 | SON5x6 | SON5x6 | SON5x6 | SON3x3 | SON5x6 | SON5x6 | SON5x6 | SON2x2 | SON5x6 | SON5x6 |
| 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 |
| 1.2 | 1.1 | 1.2 | 1.1 | 1.3 | 1.1 | 1.1 | 1.3 | 1.3 | 1.3 | 1.2 | 1.1 | 1.3 | 1.6 | 1.6 |
| 60 | 87 | 60 | 73 | 50 | 87 | 65 | ||||||||
| 60 | 100 | 100 | 60 | 50 | 100 | 100 | 100 | 5 | ||||||
| Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
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