深入解析ADVANTECH 288Pin DDR4 2133 VLP RDIMM 4GB内存模块

在当今的电子设备中，内存模块的性能和稳定性至关重要。ADVANTECH的288Pin DDR4 2133 VLP RDIMM 4GB内存模块（型号：AQD - D4U4GRV21 - SG）以其出色的性能和丰富的特性，成为众多电子设备的理想选择。下面，我们就来详细了解一下这款内存模块。

文件下载：AQD-D4U4GRV21-SG.pdf

一、模块概述

1.1 基本描述

DDR4 VLP Registered DIMMs采用512Mx8bits DDR4 SDRAM的FBGA封装和4K - bit串行EEPROM，安装在288引脚的印刷电路板上，属于双列直插式内存模块，可插入288引脚的边缘连接器插座。其同步设计借助系统时钟实现精确的周期控制，数据I/O事务可在DQS的两个边缘进行。该模块具有广泛的工作频率和可编程延迟，适用于各种高带宽和高性能的内存系统应用。

1.2 主要特性

• 环保合规：符合RoHS标准，环保可靠。
• 电源要求：遵循JEDEC标准，采用1.2V ± 0.06V的电源供电，VDDQ同样为1.2V ± 0.06V。
• 时钟频率：时钟频率为1067MHZ，数据传输速率可达2133Mb/s/Pin。
• 可编程特性：支持多种可编程功能，如可编程CAS延迟（10,11,12,13,14,15,16）、可编程附加延迟（Posted /CAS：0,CL - 2或CL - 1时钟）、可编程/CAS写延迟（CWL = 11, 14（DDR4 - 2133））等。
• 数据传输：具备8位预取功能，突发长度为4或8，采用双向差分数据选通。
• 其他特性：拥有片内终端（ODT）引脚、串行存在检测（EEPROM）、DIMM上热传感器、异步复位等功能。

二、引脚信息

2.1 引脚标识

该模块的引脚众多，每个引脚都有特定的功能。例如，A0 - A14为寄存器地址输入，BA0、BA1为寄存器组选择输入，RAS_n为寄存器行地址选通输入等。详细的引脚功能可参考如下表格：	Symbol	Function
A0~A14	Register address input
BA0, BA1	Register bank select input
BG0, BG1	Register bank group select input
RAS_n	Register row address strobe input
CAS_n	Register column address strobe input
WE_n	Register write enable input
CS0_n, CS1_n, CS2_n, CS3_n	DIMM Rank Select Lines input
CKE0, CKE1	Register clock enable lines input
ODT0, ODT1	Register on-die termination control lines input
ACT_n	Register input for activate input
DQ0~Q63	DIMM memory data bus
CB0~B7	DIMM ECC check bits
TDQS9_t~TDQS17_t TDQS9_c~TDQS17_c	Dummy loads for mixed populations of x4 based and x8 based RDIMMs.
DQS0_t~DQS17_t	Data Buffer data strobes (positive line of differential pair)
DQS0_c~DQS17_c	Data Buffer data strobes (negative line of differential pair)
CK0_t, CK1_t	Register clock input (positive line of differential pair)
CK0_c, CK1_c	Register clocks input (negative line of differential pair)
SCL	I2C serial bus clock for SPD/TS and register
SDA	I2C serial bus data line for SPD/TS and register
SA0~SA2	I2C slave address select for SPD/TS and register
PAR	Register parity input
VDD	SDRAM core power supply
VREFCA	SDRAM command/address reference supply
VSS	Power supply return (ground)
VDDSPD	Serial SPD/TS positive power supply
ALERT_n	Register ALERT_n output
VPP	SDRAM activating power supply
RESET_n	Set Register and SDRAMs to a Known State
EVENT_n	SPD signals a thermal event has occurred.
VTT	SDRAM I/O termination supply
RFU	Reserved for future use
NC	No Connection

2.2 引脚分配

引脚分配表详细列出了每个引脚的编号和名称，如引脚01为12V 3,NC，引脚02为VSS等。需要注意的是，不同类型的DIMM（如UDIMMs、RDIMMs、LRDIMMs、NVDIMMs、Hybrid /NVDIMM）对部分引脚的定义有所不同。例如，引脚230在UDIMMs、RDIMMs和LRDIMMs中定义为NC，在NVDIMMs中定义为SAVE_n；引脚1和145在UDIMMs、RDIMMs和LRDIMMs中定义为NC，在Hybrid /NVDIMM中定义为12V。

三、电气特性

3.1 工作温度条件

该模块的工作温度范围为0 - 85°C，这里的工作温度指的是DRAM中心/顶部的表面温度，测量条件可参考JESD51 - 2标准。在这个温度范围内，所有DRAM规格都能得到支持。

3.2 绝对最大直流额定值

• 电压范围：VDD相对于Vss的电压范围为 - 0.3 ~ 1.5V，VDDQ相对于Vss的电压范围同样为 - 0.3 ~ 1.5V，VPP相对于Vss的电压范围为 - 0.3 ~ 3.0V，任何引脚相对于Vss的电压范围为 - 0.3 ~ 1.5V。
• 存储温度：存储温度范围为 - 55 ~ +100°C，存储温度也是DRAM中心/顶部的表面温度，测量条件参考JESD51 - 2标准。需要注意的是，VPP必须始终等于或大于VDD/VDDQ。

3.3 交流和直流工作条件

• 推荐直流工作条件：VDD的范围为1.14 - 1.26V，典型值为1.2V；VDDQ的范围为1.14 - 1.26V，典型值为1.2V；VPP的范围为2.375 - 2.75V，典型值为2.5V。同时，VDDQ必须小于或等于VDD，VDDQ与VDD同步变化，直流带宽限制为20MHz。
• 单端交流和直流输入电平：对于命令和地址，I/O参考电压（CMD/ADD）VREFCA(DC)范围为0.49 VDDQ - 0.51 VDDQ，直流输入逻辑高VIH(DC)范围为VREF + 0.075 - VDD，直流输入逻辑低VIL(DC)范围为VSS - VREF - 0.075等。
• 差分交流和直流输入电平：如差分输入高直流VIHdiff(DC)最小为 + 0.150V，差分输入低直流VILdiff(DC)最大为 - 0.150V等。
• 单端交流和直流输出电平：直流输出高测量电平VOH(DC)为1.1 VDDQ，直流输出中测量电平VOM(DC)为0.8 VDDQ等。
• 差分交流和直流输出电平：交流差分输出高测量电平VOHdiff(AC)为 + 0.3 VDDQ，交流差分输出低测量电平VOLdiff(AC)为 - 0.3 VDDQ。

四、电流参数

不同工作模式下，该模块的电流参数不同。例如，在一个银行激活 - 预充电工作模式下（IDD0），电流为810mA；在一个银行激活 - 读取 - 预充电工作模式下（IDD1），电流为855mA等。具体的电流参数如下表所示：		Parameter	Symbol	DDR4 2133 CL15	Unit
Operating One bank Active-Precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, /CS is HIGH between valid commands;Address bus inputs are SWITCHING; Data bus inputs are SWITCHING		IDD0	810	mA
IDD4W	Operating One bank Active-read-Precharge current; IOUT = 0mA; BL = 8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as	IDD1	855	mA
	Precharge power-down current ; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING	IDD2P	540	mA
	Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, /CS is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING	IDD2Q	702	mA
	Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, /CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING	IDD2N	828	mA
	Active power - down current; All banks open; tCK = tCK(IDD); CKE is LOW;			mA
FLOATING	Other control and address bus inputs are STABLE; Data bus inputs are	IDD3P	792
	Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING	IDD3N	1134	mA
IDD4W	Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as	IDD4R	1620	mA
	Operating burst write current; All banks open, Continuous burst writes; BL = 8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING IDD4R	IDD4W	1710	mA
	Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, /CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING	IDD5	1980	mA
	Self refresh current; CK and /CK at 0V; CKE ≒ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING	IDD6	360	mA
	Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 8, CL = CL(IDD), AL = tRCD(IDD)-1tCK(IDD); tCK = tCK(IDD), Trc = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1tCK(IDD); CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R;	IDD7	1935	mA

需要注意的是，模块的IDD是根据特定品牌DRAM（3Xnm）组件的IDD计算得出的，实际测量值可能会因DQ负载电容而有所不同。

五、时序参数

该模块的时序参数众多，涵盖了时钟周期、信号延迟、命令延迟等多个方面。例如，平均时钟周期tCK的范围为0.938 - <1.071ns，CK高电平宽度tCH为0.48 - 0.52tCK等。详细的时序参数可参考如下表格：	Speed		DDR4 2133		Unit
Parameter	Symbol	Min	Max
Average Clock Period	tCK	0.938	<1.071	ns
CK high-level width	tCH	0.48	0.52	tCK
CK low-level width	tCL	0.48	0.52	tCK
DQS_t,DQS_c to DQ skew, per group, per access	tDQSQ	-	TBD	tCK/2
DQS_t,DQS_c to DQ Skew determin-istic, per group, per access	tDQSQ	-	TBD	tCK/2
DQ output hold time from DQS_t,DQS_c	tQH	TBD	-	tCK/2
DQS_t,DQS_c to DQ Skew total, per group, per access; DBI enabled	tDQSQ	-	TBD	UI
DQ output hold time total from DQS_t, DQS_c; DBI enabled	tQH	TBD	-	UI
DQ to DQ offset , per group, per ac-cess referenced to DQS_t, DQS_c	tDQSQ	TBD	TBD	UI
DQS_t, DQS_c differential READ Pre-amble (2 clock preamble)	tRPRE	0.9	TBD	tCK
DQS_t, DQS_c differential READ Postamble	tRPST	TBD	TBD	tCK
DQS_t, DQS_c differential WRITE Preamble	tWPRE	0.9	-	tCK
DQS_t, DQS_c differential WRITE Postamble	tWPST	TBD	TBD	tCK
DQS_t and DQS_c low-impedance time (Referenced from RL-1)	tLZ(DQS)	-360	180	ps
DQS_t and DQS_c high-impedance time (Referenced from RL+BL/2)	tHZ(DQS)	-	180	ps
DQS_t, DQS_c differential input low pulse width	tDQSL	0.46	0.54	tCK
DQS_t, DQS_c differential input high pulse width	tDQSH	0.46	0.54	tCK
DQS_t, DQS_c rising edge to CK_t, CK_c rising edge (1 clock preamble)	tDQSS	-0.27	0.27	tCK
DQS_t, DQS_c falling edge setup time to CK_t, CK_c rising edge	tDSS	0.18	-	tCK
DQS_t, DQS_c falling edge hold time from CK_t, CK_c rising edge	tDSH	0.18	-	tCK
Delay from start of internal write trans-action to internal read command for different bank group	tWTR_S	Max(2nCK, 2.5ns)	-
Delay from start of internal write trans-action to internal read command for same bank group	tWTR_L	Max(4nCK,7.5ns)	-
WRITE recovery time	tWR	15	-	ns
Mode Register Set command cycle time	tMRD	8	-	nCK
CAS_n to CAS_n command delay for same bank group	tCCD_L	6	-	nCK
CAS_n to CAS_n command delay for different bank group	tCCD_S	4	-	nCK
Auto precharge write recovery + precharge time	tDAL	tWR+tRP/tCK		nCK
ACTIVATE to ACTIVATE Command delay to different bank group for 2KB page size	tRRD_S(2K)	Max(4nCK,5