MOS管650V-N沟道TO-220F
MOSFET场效应管-NCE65T180F
一、General Description
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This superjunction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications
二、Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
三、Package Marking And Ordering Information
四、Schematic diagram
