| Bus voltage (Max) (V) | 100 |
| Power switch | MOSFET |
| Input VCC (Min) (V) | 8 |
| Input VCC (Max) (V) | 14 |
| Peak output current (A) | 1.4 |
| Rise time (ns) | 15 |
| Operating temperature range (C) | -40 to 125 |
| Undervoltage lockout (Typ) | 8 |
| Rating | Catalog |
| Number of channels (#) | 2 |
| Fall time (ns) | 15 |
| Prop delay (ns) | 25 |
| Iq (uA) | 10 |
| Input threshold | TTL |
| Channel input logic | TTL |
| Negative voltage handling at HS pin (V) | -1 |
| Driver configuration | Dual, Independent |
- Drives Both a High Side and Low Side N-Channel MOSFET
- High Peak Output Current (1.4-A Sink / 1.3-A Source)
- Independent TTL Compatible Inputs
- Integrated Bootstrap Diode
- Bootstrap Supply Voltage to 118 V DC
- Fast Propagation Times (27-ns Typical)
- Drives 1000 pF Load With 15-ns Rise and Fall Times
- Excellent Propagation Delay Matching (2-ns Typical)
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- Pin Compatible With ISL6700
- Packages:
- SOIC
- WSON (4 mm × 4 mm)
The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100-V. The outputs are independently controlled with TTL compatible input thresholds. An integrated on chip high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.