| Bus voltage (Max) (V) | 100 |
| Power switch | MOSFET |
| Input VCC (Min) (V) | 9 |
| Input VCC (Max) (V) | 14 |
| Peak output current (A) | 2 |
| Rise time (ns) | 10 |
| Operating temperature range (C) | -40 to 125 |
| Undervoltage lockout (Typ) | 8 |
| Rating | Catalog |
| Number of channels (#) | 2 |
| Fall time (ns) | 10 |
| Prop delay (ns) | 35 |
| Iq (uA) | 10 |
| Input threshold | TTL |
| Channel input logic | TTL |
| Negative voltage handling at HS pin (V) | -1 |
| Driver configuration | Dual, Single |
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Adaptive Rising and Falling Edges With Programmable
Additional Delay - Single Input Control
- Bootstrap Supply Voltage Range up to 118-V DC
- Fast Turnoff Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads With 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- SOIC and WSON-10 4-mm × 4-mm Package
The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.