| Bus voltage (Max) (V) | 100 |
| Power switch | MOSFET |
| Input VCC (Min) (V) | 8 |
| Input VCC (Max) (V) | 14 |
| Peak output current (A) | 1.8 |
| Rise time (ns) | 10 |
| Operating temperature range (C) | -40 to 125 |
| Undervoltage lockout (Typ) | 8 |
| Rating | Catalog |
| Number of channels (#) | 2 |
| Fall time (ns) | 10 |
| Prop delay (ns) | 26 |
| Iq (uA) | 10 |
| Input threshold | TTL |
| Channel input logic | TTL |
| Negative voltage handling at HS pin (V) | -1 |
| Driver configuration | Dual, Single |
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- 1.8-A Peak Gate Drive Current
- Bootstrap Supply Voltage Range up to 118-V DC
- Integrated Bootstrap Diode
- Single TTL Compatible Input
- Programmable Turnon Delays (Dead Time)
- Enable Input Pin
- Fast Turnoff Propagation Delays (26 ns Typical)
- Drives 1000 pF With 15-ns Rise and Fall Time
- Supply Rail Undervoltage Lockout
- Low Power Consumption
- Package: Thermally Enhanced 10-Pin WSON
(4 mm × 4 mm)
The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.