Configuration | 2:1 SPDT |
Number of channels (#) | 2 |
Power supply voltage - single (V) | 2.5, 3.3 |
Protocols | MIPI |
Ron (Typ) (Ohms) | 3.5 |
CON (Typ) (pF) | 10.5 |
ON-state leakage current (Max) (μA) | 0.03 |
Bandwidth (MHz) | 800 |
Operating temperature range (C) | -40 to 85 |
Features | Break-before-make |
Input/output continuous current (Max) (mA) | 64 |
Rating | Catalog |
Supply current (Typ) (uA) | 0.1 |
- High-Bandwidth Data Paths – Up to 800 MHz
- Specified Break-Before-Make Switching
- Control Inputs Reference to VIO
- Low Charge Injection
- Excellent ON-State Resistance Matching
- Low Total Harmonic Distortion (THD)
- 2.3-V to 3.6-V Power Supply (V+)
- 1.65-V to 1.95-V Logic Supply (VIO)
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 4000-V Human-Body Model
(A114-B, Class II) - 1000-V Charged-Device Model (C101)
- 200-V Machine Model (A115-A)
- 4000-V Human-Body Model
The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.
The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.