高压电源模块简化控制系统设计
工业控制系统的电压要求在上升。例如,将以太网(POE)上的电源集成到这些系统中,正鼓励设计者将传统的24 V电源迁移到新技术要求的48 V。
这些系统要求输入电压需要转换为5或3 V(甚至更低)来提供电子设备。创建一个或多个这些低压轨由低压控制器与其他驱动程序的传统解决方案,场效应晶体管(FET),有时变压器;和高降压比通常涉及一个以上的功率级。
然而,现代的控制系统使用紧凑的模块化单元来容纳部件,所以空间很紧。这导致了对不需要空间消耗强迫冷却的电子产品的需求。取代传统的电源与紧凑,高效,硅基功率模块首选的消费电子产品设计师是对这一挑战的答案。
However, switching to silicon power is not easy because, while the nominal voltages of industrial control systems are within the capability of modern integrated switching DC/DC voltage regulators, voltage spikes of up to 100 V are not uncommon. Such transient overvoltages are sufficient to destroy a silicon regulator in seconds. Engineers are forced to add expensive and voltage-clamping networks to protect sensitive silicon power supplies, increasing design complexity, using up space and adding cost.
Fortunately, a new generation of wide-input voltage, integrated silicon power supplies are becoming available that can tolerate large voltage spikes without incurring damage or exposing downstream circuitry to the transients. This article describes some of these products and their application.
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