| VDS (V) | 25 |
| Configuration | Single |
| Rds(on) max at VGS=4.5 V (mOhms) | 6.8 |
| Rds(on) max at VGS=10 V (mOhms) | 4.5 |
| IDM - pulsed drain current (Max) (A) | 141 |
| QG typ (nC) | 6.7 |
| QGD typ (nC) | 1.9 |
| QGS typ (nC) | 3.1 |
| Package (mm) | SON5x6 |
| VGS (V) | 16 |
| VGSTH typ (V) | 1.8 |
| ID - silicon limited at Tc=25degC (A) | 113 |
| ID - package limited (A) | 100 |
| Logic level | Yes |
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- SON 5-mm × 6-mm Plastic Package
- APPLICATIONS
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
- Optimized for Control FET Applications
NexFET is a trademark of Texas Instruments.
The NexFET? power MOSFET has been designed to minimize losses in power conversion applications.