| VDS (V) | 25 |
| Configuration | Single |
| Rds(on) max at VGS=4.5 V (mOhms) | 2.6 |
| IDM - pulsed drain current (Max) (A) | 200 |
| QG typ (nC) | 14 |
| QGD typ (nC) | 2.5 |
| QGS typ (nC) | 4 |
| Package (mm) | SON5x6 |
| VGS (V) | 10 |
| VGSTH typ (V) | 1.1 |
| ID - silicon limited at Tc=25degC (A) | 177 |
| ID - package limited (A) | 100 |
| Logic level | Yes |
- Optimized for 5-V Gate Drive
- Ultra-Low Qg and Qgd
- Low-Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant
- SON 5-mm × 6-mm Plastic Package
This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET? power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.