| VDS (V) | 25 |
| Configuration | Single |
| Rds(on) max at VGS=4.5 V (mOhms) | 15 |
| Rds(on) max at VGS=10 V (mOhms) | 10 |
| IDM - pulsed drain current (Max) (A) | 138 |
| QG typ (nC) | 2.9 |
| QGD typ (nC) | 0.7 |
| QGS typ (nC) | 1.5 |
| Package (mm) | SON3x3 |
| VGS (V) | 16 |
| VGSTH typ (V) | 2 |
| ID - silicon limited at Tc=25degC (A) | 56 |
| ID - package limited (A) | 60 |
| Logic level | Yes |
This 25-V, 8-mΟ, 3.3-mm × 3.3-mm SON NexFET? power MOSFET has been designed to minimize losses in power conversion applications.