| VDS (V) | 25 |
| Configuration | Single |
| Rds(on) max at VGS=4.5 V (mOhms) | 16 |
| Rds(on) max at VGS=10 V (mOhms) | 11 |
| IDM - pulsed drain current (Max) (A) | 91 |
| QG typ (nC) | 2.9 |
| QGD typ (nC) | 0.7 |
| QGS typ (nC) | 1.4 |
| Package (mm) | SON5x6 |
| VGS (V) | 16 |
| VGSTH typ (V) | 2 |
| ID - silicon limited at Tc=25degC (A) | 52 |
| ID - package limited (A) | 52 |
| Logic level | Yes |
The NexFET? power MOSFET has been designed to minimize losses in power conversion applications.