资料下载
ISL80113超低压差1A、2A、3A低压LDO的输入电压NMOS
分享资料个
The ISL80111， ISL80112， and ISL80113 are ultra low dropout LDOs providing the optimum balance between performance， size and power consumption in size constrained designs for data communication， computing， storage and medical applications. These LDOs are specified for 1A， 2A and 3A of output current and are optimized for low voltage conversions. Operating with a VIN of 1V to 3.6V and with a legacy 2.9V to 5.5V on the BIAS， the VOUT is adjustable from 0.8V to 3.3V. With a VIN PSRR greater than 40dB at 100kHz makes these LDOs an ideal choice in noise sensitive applications. The guaranteed ±1.6% VOUT accuracy overall conditions lend these parts to supplying an accurate voltage to the latest low voltage digital ICs. An enable input allows the part to be placed into a low quiescent current shutdown mode. A submicron CMOS process is utilized for this product family to deliver best-in-class analog performance and overall value for applications in need of input voltage conversions typically below 2.5V. It also has the superior load transient regulation unique to a NMOS power stage. These LDOs consume significantly lower quiescent current as a function of load compared to bipolar LDOs.
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
- 相关下载
- 相关文章
