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不同掺Al3+浓度的ZnO:Al薄膜性能研究
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2009-05-23
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采用溶胶-凝胶法制备ZnAl(ZAO)薄膜，得到了不同掺Al3＋浓度的ZAO薄膜；利用X射线衍射仪分析、原子力显微镜、紫外-可见分光光度计及四探针法等仪器与方法对其性能进行了测试。通过分析比较，得出所制备的ZAO薄膜为多晶纤锌矿结构，薄膜表面平整、晶粒致密均匀；Al3＋掺杂能提高其导电性能：低掺杂时，薄膜在紫外-可见光范围的透过率超过80％，并伴有蓝移现象产生；高掺杂时，其透过率无明显增加，但蓝移现象加剧，最大蓝移量达340 nm 。
ZnAl (ZAO) thin films with different proportion of Al3+ doping are prepared by sol-gel method. XRD, AFM, ultraviolet-visible spectroscope meter and the method of four-explorwtion-needle are adopted to test the property of ZAO thin films. Through analysis and comparison, hereinafter phenomena can be obtained: ZAO thin films prepared by sol-gel method has polycrystalline hexagonal wurtzite structure , the surface of the ZAO thin films is flat, the crystal is very thickness and symmetry. The conductivity can be improved by Al3+ doping. The transmittance in ultraviolet-visible region is higher than 80％ with hypo-Al3+ doping, accompanying the phenomena of Burstein moving. The transmittance increases indistinctively, but the phenomena of burstein moving is aggravating, the most amount of Burstein moving measure up to 340 nm.
ZnAl (ZAO) thin films with different proportion of Al3+ doping are prepared by sol-gel method. XRD, AFM, ultraviolet-visible spectroscope meter and the method of four-explorwtion-needle are adopted to test the property of ZAO thin films. Through analysis and comparison, hereinafter phenomena can be obtained: ZAO thin films prepared by sol-gel method has polycrystalline hexagonal wurtzite structure , the surface of the ZAO thin films is flat, the crystal is very thickness and symmetry. The conductivity can be improved by Al3+ doping. The transmittance in ultraviolet-visible region is higher than 80％ with hypo-Al3+ doping, accompanying the phenomena of Burstein moving. The transmittance increases indistinctively, but the phenomena of burstein moving is aggravating, the most amount of Burstein moving measure up to 340 nm.
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