Features
: TrenchFET Power MOSFET: 1.8-V Rated : Gate-Source ESD Protected: 2000 V : High-Side Switching : Low On-Resistance: 1.2 : : Low Threshold: 0.8 V (typ) : Fast Switching Speed: 14 ns : S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS
Ease in Driving Switches : Low Offset (Error) Voltage : Low-Voltage Operation : High-Speed Circuits : Low Battery Voltage Operation
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