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NIS6111 Better ORing Diode Ope
消耗积分:2 |
格式:rar |
大小:344 |
2010-05-20
韩刚龙
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The NIS6111 is a simple and reliable device consisting of
an integrated control IC with a low RDS(on) power MOSFET,
using hybrid technology. It is designed to replace Schottky
diodes in ORing applications to obtain higher system power
efficiency. It can be connected to allow load sharing with
automatic switchover of the load between two or more input
power supplies. A single NIS6111 is able to run up to 20 A
without any air flow. To meet high current requirement
( i.e. 60 A), the NIS6111 is designed to drive more than four
paralleled additional NTD110N02 MOSFETs. The unique
package design of NIS6111 offers higher thermal efficiency
to minimize cooling requirements.
This application note presents more details of the 30 A and
60 A demonstration boards. Both of them can be easily
connected to power sources and loads for any test purpose.
an integrated control IC with a low RDS(on) power MOSFET,
using hybrid technology. It is designed to replace Schottky
diodes in ORing applications to obtain higher system power
efficiency. It can be connected to allow load sharing with
automatic switchover of the load between two or more input
power supplies. A single NIS6111 is able to run up to 20 A
without any air flow. To meet high current requirement
( i.e. 60 A), the NIS6111 is designed to drive more than four
paralleled additional NTD110N02 MOSFETs. The unique
package design of NIS6111 offers higher thermal efficiency
to minimize cooling requirements.
This application note presents more details of the 30 A and
60 A demonstration boards. Both of them can be easily
connected to power sources and loads for any test purpose.
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