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Ultra Low Current DC Character
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2010-07-10
张磊
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Introduction
The continuing trend of smaller
and smaller device geometries
for the next generation of ULSI
devices creates many new
parametric testing challenges.
In particular, the need for low
current measurements in
semiconductor process integra-
tion and process monitoring is
becoming more and more
critical.
The continuing trend of smaller
and smaller device geometries
for the next generation of ULSI
devices creates many new
parametric testing challenges.
In particular, the need for low
current measurements in
semiconductor process integra-
tion and process monitoring is
becoming more and more
critical.
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