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LM113/LM313 pdf,LM113/LM313 da
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2008-09-06
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LM113/LM313 Reference Diode
General Description
The LM113/LM313 are temperature compensated, low voltage
reference diodes. They feature extremely-tight regulation
over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability.
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit. As such, they have the
same low noise and long term stability as modern IC op
amps. Further, output voltage of the reference depends only
on highly-predictable properties of components in the IC; so
they can be manufactured and supplied to tight tolerances.
Features
Y Low breakdown voltage: 1.220V
Y Dynamic impedance of 0.3X from 500 mA to 20 mA
Y Temperature stability typically 1% overb55§C to 125§C
range (LM113), 0§C to 70§C (LM313)
Y Tight tolerance: g5%, g2% or g1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry, in low-voltage power supplies or in
battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of siliconÐthe energy-
band gap voltageÐmakes it useful for many temperature-
compensation and temperature-measurement functions.
General Description
The LM113/LM313 are temperature compensated, low voltage
reference diodes. They feature extremely-tight regulation
over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability.
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit. As such, they have the
same low noise and long term stability as modern IC op
amps. Further, output voltage of the reference depends only
on highly-predictable properties of components in the IC; so
they can be manufactured and supplied to tight tolerances.
Features
Y Low breakdown voltage: 1.220V
Y Dynamic impedance of 0.3X from 500 mA to 20 mA
Y Temperature stability typically 1% overb55§C to 125§C
range (LM113), 0§C to 70§C (LM313)
Y Tight tolerance: g5%, g2% or g1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry, in low-voltage power supplies or in
battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of siliconÐthe energy-
band gap voltageÐmakes it useful for many temperature-
compensation and temperature-measurement functions.
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