资料下载
×
FM25640 pdf datasheet (64Kb FR
消耗积分:5 |
格式:rar |
大小:666 |
2008-09-23
杨平
分享资料个
The FM25640 is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 45 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
Unlike serial EEPROMs, the FM25640 performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after it has been successfully transferred
to the device. The next bus cycle may commence
immediately. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25640 is capable of
supporting up to 1012 read/write cycles -- far more
than most systems will require from a serial memory.
These capabilities make the FM25640 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25640 provides substantial benefits to users
of serial EEPROM, in a hardware drop-in
replacement. The FM25640 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. The specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 45 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
Unlike serial EEPROMs, the FM25640 performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after it has been successfully transferred
to the device. The next bus cycle may commence
immediately. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25640 is capable of
supporting up to 1012 read/write cycles -- far more
than most systems will require from a serial memory.
These capabilities make the FM25640 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25640 provides substantial benefits to users
of serial EEPROM, in a hardware drop-in
replacement. The FM25640 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. The specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
评论(0)
发评论
- 相关下载
- 相关文章
