The FM24CL64 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL64 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM24CL64 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL64 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL64 is available in industry standard 8-pin SOIC and DFN packages using a familiar two-wire protocol. It is guaranteed over an industrial temperature range of -40°C to +85°C.