The switched current(SI) technology is a new sampled data technology which will replace the switched capacitor(SC)technology.First the conception of switched—current technology is introduced in this paper,and then an analysis of errors in SI—memory cell is given.The resolvents which aimed at the errors mentioned above are provided.At last,a new improved circuit is given.HSPICE simulation result using TSMC 0.35μm process parameter model demonstrates that the designed circuits have perfect output waveforms in terms of low errors.The results achieve the desired objectives.