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cy7c1041cv33汽车4兆位静态RAM
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The CY7C1041CV33 Automotive is a high performance CMOS static RAM organized as 262，144 words by 16 bits. To write to the device， take Chip Enable （CE） and Write Enable （WE） inputs LOW. If Byte Low Enable （BLE） is LOW， then data from I/O pins （I/O0 through I/O7）， is written into the location specified on the address pins （A0 through A17）。 If Byte High Enable （BHE） is LOW， then data from I/O pins （I/O8 through I/O15） is written into the location specified on the address pins （A0 through A17）。 To read from the device， take Chip Enable （CE） and Output Enable （OE） LOW while forcing the Write Enable （WE） HIGH. If Byte Low Enable （BLE） is LOW， then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable （BHE） is LOW， then data from memory appears on I/O8 to I/O15. For more information， see the Truth Table on page 11 for a complete description of Read and Write modes. The input and output pins （I/O0 through I/O15） are placed in a high impedance state when the device is deselected （CE HIGH）， the outputs are disabled （OE HIGH）， the BHE and BLE are disabled （BHE， BLE HIGH）， or during a write operation （CE LOW and WE LOW）.
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