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RT9600 pdf datasheet (Synchron
消耗积分:2 |
格式:rar |
大小:333 |
2008-12-11
张静
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The RT9600 is a high frequency, dual MOSFET
driver specifically designed to drive two power NChannel
MOSFETs in a synchronous-rectified buck
converter topology. This driver combined with a
RT9237 Multi-Phase Buck PWM controller form a
complete core-voltage regulator solution for
advanced microprocessors.
The RT9600 drives both the lower/upper gate in a
synchronous-rectifier bridge to 12V. Independent
driving of upper gate through PVCC pin is
achievable. Recommended PVCC ranges are from
8 to 12V for Rds(on) concern. This drive-voltage
flexibility provides the advantage of optimizing
applications involving trade-offs between switching
losses and conduction losses.
The output drivers in the RT9600 have the capacity
to efficiently switch power MOSFETs at frequencies
up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and
50ns transition time. RT9600 implements
bootstrapping on the upper gate with only an
external capacitor required. This reduces
implementation complexity and allows the use of
higher performance, cost effective, N-Channel
MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from
conducting simultaneously.
driver specifically designed to drive two power NChannel
MOSFETs in a synchronous-rectified buck
converter topology. This driver combined with a
RT9237 Multi-Phase Buck PWM controller form a
complete core-voltage regulator solution for
advanced microprocessors.
The RT9600 drives both the lower/upper gate in a
synchronous-rectifier bridge to 12V. Independent
driving of upper gate through PVCC pin is
achievable. Recommended PVCC ranges are from
8 to 12V for Rds(on) concern. This drive-voltage
flexibility provides the advantage of optimizing
applications involving trade-offs between switching
losses and conduction losses.
The output drivers in the RT9600 have the capacity
to efficiently switch power MOSFETs at frequencies
up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and
50ns transition time. RT9600 implements
bootstrapping on the upper gate with only an
external capacitor required. This reduces
implementation complexity and allows the use of
higher performance, cost effective, N-Channel
MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from
conducting simultaneously.
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