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HM-6508 pdf datasheet (1024 x
消耗积分:3 |
格式:rar |
大小:233 |
2009-01-09
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The HM-6508 is a 1024 x 1 static CMOS RAM fabricated
using self-aligned silicon gate technology. Synchronous
circuit design techniques are employed to achieve high performance
and low power operation.
On-Chip latches are provided for address, allowing efficient
interfacing with microprocessor systems. The data output
buffers can be forced to a high impedance state for use in
expanded memory arrays.
The HM-6508 is a fully static RAM and may be maintained in
any state for an indefinite period of time. Data retention supply
voltage and supply current are guaranteed over temperature.
using self-aligned silicon gate technology. Synchronous
circuit design techniques are employed to achieve high performance
and low power operation.
On-Chip latches are provided for address, allowing efficient
interfacing with microprocessor systems. The data output
buffers can be forced to a high impedance state for use in
expanded memory arrays.
The HM-6508 is a fully static RAM and may be maintained in
any state for an indefinite period of time. Data retention supply
voltage and supply current are guaranteed over temperature.
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