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HM-6883 pdf datasheet (1024 x
消耗积分:3 |
格式:rar |
大小:233 |
2009-01-09
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The HM-6508/883 is a 1024 x 1 static CMOS RAM
fabricated using self-aligned silicon gate technology.
Synchronous circuit design techniques are employed to
achieve high performance and low power operation.
On chip latches are provided for address allowing efficient
interfacing with microprocessor systems. The data output
buffers can be forced to a high impedance state for use in
expanded memory arrays.
The HM-6508/883 is a fully static RAM and may be maintained
in any state for an indefinite period of time. Data
retention supply voltage and supply current are guaranteed
over temperature.
fabricated using self-aligned silicon gate technology.
Synchronous circuit design techniques are employed to
achieve high performance and low power operation.
On chip latches are provided for address allowing efficient
interfacing with microprocessor systems. The data output
buffers can be forced to a high impedance state for use in
expanded memory arrays.
The HM-6508/883 is a fully static RAM and may be maintained
in any state for an indefinite period of time. Data
retention supply voltage and supply current are guaranteed
over temperature.
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