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HM-6617 pdf datasheet (2K x 8
消耗积分:2 |
格式:rar |
大小:344 |
2009-01-09
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The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in
a 2K word by 8-bit/word format with “Three-State” outputs.
The HM-6617/883 utilizes a synchronous design technique.
This includes on-chip address latches and a separate output
enable control which makes this device ideal for applications
utilizing recent generation microprocessors. This design
technique, combined with the Intersil advanced self-aligned
silicon gate CMOS process technology offers ultra-low
standby current. Low ICCSB is ideal for battery applications
or other systems with low power requirements.
The Intersil NiCr fuse link technology is utilized on this and
other Intersil CMOS PROMs. This gives the user a PROM
with permanent, stable storage characteristics over the full
industrial and military temperature voltage ranges. NiCr fuse
technology combined with the low power characteristics of
CMOS provides an excellent alternative to standard bipolar
PROMs or NMOS EPROMs.
a 2K word by 8-bit/word format with “Three-State” outputs.
The HM-6617/883 utilizes a synchronous design technique.
This includes on-chip address latches and a separate output
enable control which makes this device ideal for applications
utilizing recent generation microprocessors. This design
technique, combined with the Intersil advanced self-aligned
silicon gate CMOS process technology offers ultra-low
standby current. Low ICCSB is ideal for battery applications
or other systems with low power requirements.
The Intersil NiCr fuse link technology is utilized on this and
other Intersil CMOS PROMs. This gives the user a PROM
with permanent, stable storage characteristics over the full
industrial and military temperature voltage ranges. NiCr fuse
technology combined with the low power characteristics of
CMOS provides an excellent alternative to standard bipolar
PROMs or NMOS EPROMs.
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