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LF357N芯片资料
消耗积分:10 |
格式:rar |
大小:976 KB |
2011-03-04
彭友旺
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amplifiers
to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FET™ Technology).
These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejection. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling time,
low voltage and current noise and a low 1/f noise corner.
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