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HIP5061脉宽调制器的工作原理及其典型应用
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2009-05-12
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HIP5061脉宽调制器的工作原理及其典型应用:Introduction
As the complexity of sophisticated, modern day equipment
grows, the need for high efficiency, high performance and
high power converters continues to expand. Demand for
smaller, lighter, more efficient supplies for this equipment is
addressed by the HIP5061. The HIP5061 contains a 60V, 5A
(7A minimum at <30% duty cycle, 5A at DC) DMOS power
transistor with an rDS(ON) of approximately 0.18W. This low
rDS(ON) of the switching device permits high rms currents
without excessive device dissipation. The IC is housed in a 7
lead, TO220 style package. By including a DMOS power
transistor with its associated driver and the current-mode
PWM control circuitry within a single package, simplification
and improved performance of many power supply systems
can be achieved. This note explains the operation and
proper application of the HIP5061 so that this high performance
device can be utilized. A 50W, 28V boost converter
will be presented to demonstrate a typical application of the
IC. Supplies using an external high voltage, power MOSFET
transistor in a cascode configuration with the internal DMOS
transistor can have higher power outputs, many in excess of
200W.
As the complexity of sophisticated, modern day equipment
grows, the need for high efficiency, high performance and
high power converters continues to expand. Demand for
smaller, lighter, more efficient supplies for this equipment is
addressed by the HIP5061. The HIP5061 contains a 60V, 5A
(7A minimum at <30% duty cycle, 5A at DC) DMOS power
transistor with an rDS(ON) of approximately 0.18W. This low
rDS(ON) of the switching device permits high rms currents
without excessive device dissipation. The IC is housed in a 7
lead, TO220 style package. By including a DMOS power
transistor with its associated driver and the current-mode
PWM control circuitry within a single package, simplification
and improved performance of many power supply systems
can be achieved. This note explains the operation and
proper application of the HIP5061 so that this high performance
device can be utilized. A 50W, 28V boost converter
will be presented to demonstrate a typical application of the
IC. Supplies using an external high voltage, power MOSFET
transistor in a cascode configuration with the internal DMOS
transistor can have higher power outputs, many in excess of
200W.
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