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用于GSM基站的RF LDMOS功率放大器应用电路-最优偏置
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2009-05-12
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The performances of RF power amplifiers for base station
transceivers results in a tradeoff between linearity, efficiency
and gain. This tradeoff leads to an optimum quiescent
current. But the following parameters modify this bias point:
temperature range (commonly –40°C/+85°C), supply voltage
and bias voltage variations (commonly +/–5%) and
manufacturing spread. The purpose of this paper is to
present a new biasing circuit which minimizes quiescent
current variations suitable for LDMOS RF power transistors.
transceivers results in a tradeoff between linearity, efficiency
and gain. This tradeoff leads to an optimum quiescent
current. But the following parameters modify this bias point:
temperature range (commonly –40°C/+85°C), supply voltage
and bias voltage variations (commonly +/–5%) and
manufacturing spread. The purpose of this paper is to
present a new biasing circuit which minimizes quiescent
current variations suitable for LDMOS RF power transistors.
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