资料下载
×
超经典英文版irf540npb规格书
消耗积分:1 |
格式:pdf |
大小:153KB |
2014-08-01
夏末amy
分享资料个
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area。This benefit，combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for， provides the designer with an extremely efficient and reliable device for use in a wide variety of applications。The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts。 The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry。
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
评论(0)
发评论
- 相关下载
- 相关文章
