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IRF150 pdf datasheet
消耗积分:5 |
格式:rar |
大小:150 |
2008-07-17
王军
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The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
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