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cpc3703 250V的N沟道耗尽型场效应晶体管
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The CPC3703 is an N-channel， depletion mode， field effect transistor （FET） that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class， high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device， with high input impedance， for use in high-power applications. The CPC3703 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance， particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low， 4 maximum， on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V， and is available in an SOT-89 package. As with all MOS devices， the FET structure prevents thermal runaway and thermal-induced secondary breakdown
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