The FM1808 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 45 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make FRAM superior to other types of nonvolatile memory. In-system operation of the FM1808 is very similar to other RAM devices. Minimum read- and write-cycle times are equal. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM1808 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C.