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FM25CL64 pdf datasheet (64Kb F
消耗积分:3 |
格式:rar |
大小:666 |
2008-09-23
杨海清
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The FM25CL64 is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25CL64 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. The
next bus cycle may start immediately. In addition, the
product offers virtually unlimited write endurance,
orders of magnitude more endurance than EEPROM.
Also, FRAM exhibits much lower power during
writes than EEPROM since write operations do not
require an internally elevated power supply voltage
for write circuits.
These capabilities make the FM25CL64 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25CL64 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25CL64 uses the high-speed
SPI bus, which enhances the high-speed write
capability of FRAM technology. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25CL64 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. The
next bus cycle may start immediately. In addition, the
product offers virtually unlimited write endurance,
orders of magnitude more endurance than EEPROM.
Also, FRAM exhibits much lower power during
writes than EEPROM since write operations do not
require an internally elevated power supply voltage
for write circuits.
These capabilities make the FM25CL64 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25CL64 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25CL64 uses the high-speed
SPI bus, which enhances the high-speed write
capability of FRAM technology. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
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