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HM-6514 pdf datasheet (1024 x
消耗积分:3 |
格式:rar |
大小:233 |
2009-01-09
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The HM-6514 is a 1024 x 4 static CMOS RAM fabricated
using self-aligned silicon gate technology. The device utilizes
synchronous circuitry to achieve high performance and
low power operation.
On-chip latches are provided for addresses allowing efficient
interfacing with microprocessor systems. The data output
can be forced to a high impedance state for use in expanded
memory arrays.
Gated inputs allow lower operating current and also eliminate
the need for pull up or pull down resistors. The
HM-6514 is a fully static RAM and may be maintained in any
state for an indefinite period of time.
Data retention supply voltage and supply current are guaranteed
over temperature.
using self-aligned silicon gate technology. The device utilizes
synchronous circuitry to achieve high performance and
low power operation.
On-chip latches are provided for addresses allowing efficient
interfacing with microprocessor systems. The data output
can be forced to a high impedance state for use in expanded
memory arrays.
Gated inputs allow lower operating current and also eliminate
the need for pull up or pull down resistors. The
HM-6514 is a fully static RAM and may be maintained in any
state for an indefinite period of time.
Data retention supply voltage and supply current are guaranteed
over temperature.
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