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ISL6620, ISL6620A pdf datashee
消耗积分:3 |
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大小:333 |
2009-02-10
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The ISL6620, ISL6620A is a high frequency MOSFET driver
designed to drive upper and lower power N-Channel
MOSFETs in a synchronous rectified buck converter topology.
The advanced PWM protocol of ISL6620, ISL6620A is
specifically designed to work with Intersil VR11.1 controllers
and combined with N-Channel MOSFETs, form a complete
core-voltage regulator solution for advanced microprocessors.
When ISL6620, ISL6620A detects a PSI protocol sent by an
Intersil VR11.1 controller, it activates Diode Emulation (DE)
operation; otherwise, it operates in normal Continuous
Conduction Mode (CCM) PWM mode.
The IC is biased by a single low voltage supply (5V),
minimizing driving losses in high MOSFET gate capacitance
and high switching frequency applications. Each driver is
capable of driving a 3nF load with less than 10ns rise/fall time.
Bootstrapping of the upper gate driver is implemented via an
internal low forward drop diode, reducing implementation cost,
complexity, and allowing the use of higher performance, cost
effective N-Channel MOSFETs.
designed to drive upper and lower power N-Channel
MOSFETs in a synchronous rectified buck converter topology.
The advanced PWM protocol of ISL6620, ISL6620A is
specifically designed to work with Intersil VR11.1 controllers
and combined with N-Channel MOSFETs, form a complete
core-voltage regulator solution for advanced microprocessors.
When ISL6620, ISL6620A detects a PSI protocol sent by an
Intersil VR11.1 controller, it activates Diode Emulation (DE)
operation; otherwise, it operates in normal Continuous
Conduction Mode (CCM) PWM mode.
The IC is biased by a single low voltage supply (5V),
minimizing driving losses in high MOSFET gate capacitance
and high switching frequency applications. Each driver is
capable of driving a 3nF load with less than 10ns rise/fall time.
Bootstrapping of the upper gate driver is implemented via an
internal low forward drop diode, reducing implementation cost,
complexity, and allowing the use of higher performance, cost
effective N-Channel MOSFETs.
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