资料下载
横向高压DMOS单粒子辐照瞬态响应
五斤麻辣油
分享资料个
基于单粒子辐照的等离子体输运机理，提出了横向高压DMOS单粒子辐照的瞬态响应模型。借助对横向高压DMOS的关态和开态的不同能量粒子辐照瞬态响应的二维数值分析，获得了横向高压DMOS在双结、单结和无结情况下的瞬态响应特性。其计算结果表明，横向高压DMOS的开态漏端峰值电流比关态的漏端峰值电流小，且漏端峰值电流和峰值电流出现的时间随入射粒子能量的增大而增加。
关 键 词 横向高压DMOS; 单粒子效应; 等离子体; 瞬态响应
Abstract Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOS is proposed. The transient response characters of DMOS at non-junction, single junction and double junction are obtained by the transient response numerical analysis result of the open and close state of the DMOS at different energy ion radiation. Indicated that the peak value drain current of the turn-on state is bigger than that of the turn-off state, the peak value drain current and the arisen time of the peak value drain current are increased while the energy of the ion is increased.
Key words lateral high-voltage DMOS; single event effect; plasma; transient response
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
- 相关下载
- 相关文章
