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功率场效应晶体管MOSFET雪崩耐量分析

消耗积分:0 | 格式:pdf | 大小:54 KB | 2011-04-02

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　　Electronic applications have progressed significantly in recent years and have inevitably

　　increased the demand for an intrinsically rugged power MOSFET. Device ruggedness is

　　defined by the capacity of a device to sustain an avalanche current during an unclamped

　　inductive load switching event. However, the avalanche ruggedness performance of a

　　power MOSFET is normally measured within the industry as a single-shot Unclamped

　　Inductive Switching (UIS) avalanche energy or EAS. Whilst this provides an easy and quick

　　method of quantifying the robustness of a MOSFET in avalanche, it does not necessarily

　　reflect the true device avalanche capability (see Ref. 1, Ref. 2 and Ref. 3) in an

　　application.

 

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