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介绍功率MOSFET的串行连接
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2009-05-12
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To reduce the ON-resistance for a given voltage range. Since the ON-resistance for highvoltage
MOSFETs is largely determined by the epi area, this increases at a higher than
linear rate (RDS » VBR
2.5 .. 2.7).
The RDSon-resistance of two 500-V transistors connected in series is significantly lower than
that of a 1000-V transistor.
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