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BFP 420晶体管设计2.4 GHz低噪声放大器
消耗积分:10 |
格式:rar |
大小:333 |
2009-05-12
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The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon
bipolar junction RF-transistors. This application note describes a low-noise amplifier with the
following characteristics:
Gain: 13.6 dB
Noise Figure: 1.4 dB @ Frequency=2.4 GHz,Vce=2.5V,Ic=5mA
Unconditionally stable at all frequencies
bipolar junction RF-transistors. This application note describes a low-noise amplifier with the
following characteristics:
Gain: 13.6 dB
Noise Figure: 1.4 dB @ Frequency=2.4 GHz,Vce=2.5V,Ic=5mA
Unconditionally stable at all frequencies
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