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TLP291光耦资料

消耗积分:2 | 格式:pdf | 大小:278KB | 2014-08-29

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TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode。 TLP291 is housed in the SO4 package,very small and thin coupler。Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers。

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