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9安培低侧超快MOSFET驱动器IXDN609CI

消耗积分:0 | 格式:rar | 大小:0.34 MB | 2017-09-11

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　　Description The IXDD609/IXDI609/IXDN609 high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_609 high-current output can source and sink 9A of peak current while producing voltage rise and fall times of less than 25ns. The input is CMOS compatible， and is virtually immune to latch up. Proprietary circuitry eliminates cross-conduction and current “shoot-through.” Low propagation delay and fast， matched rise and fall times make the IXD_609 family ideal for high-frequency and high-power applications. The IXDD609 is configured as a non-inverting driver with an enable， the IXDN609 is configured as a non-inverting driver， and the IXDI609 is configured as an inverting driver. The IXD_609 family is available in a standard 8-pin DIP （PI）; an 8-pin SOIC （SIA）; an 8-pin Power SOIC with an exposed metal back （SI）; an 8-pin DFN （D2）; a 5-pin TO-263 （YI）; and a 5-pin TO-220 （CI）.
9安培低侧超快MOSFET驱动器IXDN609CI

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