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2安培双超快低端MOSFET驱动器IXDN602SIA

消耗积分:0 | 格式:rar | 大小:0.30 MB | 2017-09-11

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　　Description The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is CMOS compatible， and is virtually immune to latch up. Proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast， matched rise and fall times make the IXD_602 family ideal for high-frequency and high-power applications. The IXDN602 is configured as a dual non-inverting driver， the IXDI602 is configured as a dual inverting driver， and the IXDF602 has one inverting and one non-inverting driver. The IXD_602 family is available in a standard 8-pin DIP （PI）， an 8-pin SOIC （SIA）， an 8-pin Power SOIC with an exposed metal back （SI）， and an 8-pin DFN （D2） package.
2安培双超快低端MOSFET驱动器IXDN602SIA

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