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cy62187ev30 mobl®64兆位（4米×16）静态RAM
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The CY62187EV30 is a high performance CMOS static RAM organized as 4 M words by 16-bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life （MoBL®） in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can also be put into standby mode when deselected （CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH）。 The input and output pins （I/O0 through I/O15） are placed in a high impedance state when： deselected （CE1HIGH or CE2 LOW）， outputs are disabled （OE HIGH）， both Byte High Enable and Byte Low Enable are disabled （BHE， BLE HIGH）， or during a write operation （CE1 LOW， CE2 HIGH and WE LOW）。 To write to the device， take Chip Enables （CE1 LOW and CE2 HIGH） and Write Enable （WE） input LOW. If Byte Low Enable （BLE） is LOW， then data from I/O pins （I/O0 through I/O7）， is written into the location specified on the address pins （A0 through A21）。 If Byte High Enable （BHE） is LOW， then data from I/O pins （I/O8 through I/O15） is written into the location specified on the address pins （A0 through A21）。 To read from the device， take Chip Enables （CE1 LOW and CE2 HIGH） and Output Enable （OE） LOW while forcing the Write Enable （WE） HIGH. If Byte Low Enable （BLE） is LOW， then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable （BHE） is LOW， then data from memory appears on I/O8 to I/O15. See the Truth Table on page 9 for a complete description of read and write modes. For a complete list of related documentation， click here.
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