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cy621282bn mobl®汽车1兆位静态RAM
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The CY621282BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable （CE1）， an active HIGH Chip Enable （CE2）， and active LOW Output Enable （OE）。 This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. Writing to the device is accomplished by taking Chip Enable One （CE1） and Write Enable （WE） inputs LOW and Chip Enable Two （CE2） input HIGH. Data on the eight I/O pins （I/O0 through I/O7） is then written into the location specified on the address pins （A0 through A16）。 Reading from the device is accomplished by taking Chip Enable One （CE1） and Output Enable （OE） LOW while forcing Write Enable （WE） and Chip Enable Two （CE2） HIGH. Under these conditions， the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins （I/O0 through I/O7） are placed in a high-impedance state when the device is deselected （CE1 HIGH or CE2 LOW）， the outputs are disabled （OE HIGH）， or during a write operation （CE1 LOW， CE2 HIGH， and WE LOW）.
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