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cy62147ev30 mobl®汽车4兆位静态RAM
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The CY62147EV30 is a high-performance CMOS static RAM （SRAM） organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ （MoBL） in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected （CE HIGH or both BLE and BHE are HIGH）。 The input and output pins （I/O0 through I/O15） are placed in a high-impedance state when： ■ Deselected （CE HIGH） ■ Outputs are disabled （OE HIGH） ■ Both Byte High Enable and Byte Low Enable are disabled （BHE， BLE HIGH） ■ Write operation is active （CE LOW and WE LOW） To write to the device， take Chip Enable （CE） and Write Enable （WE） inputs LOW. If Byte Low Enable （BLE） is LOW， then data from I/O pins （I/O0 through I/O7） is written into the location specified on the address pins （A0 through A17）。 If Byte High Enable （BHE） is LOW， then data from I/O pins （I/O8 through I/O15） is written into the location specified on the address pins （A0 through A17）。 To read from the device， take Chip Enable （CE） and Output Enable （OE） LOW while forcing the Write Enable （WE） HIGH. If Byte Low Enable （BLE） is LOW， then data from the memory location specified by the address pins appear on I/O0 to I/O7. If Byte High Enable （BHE） is LOW， then data from memory appears on I/O8 to I/O15. See the Truth Table on page 12 for a complete description of read and write modes. For a complete list of related resources， click here.
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