HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 60 V VCEO Collector to Emitter Voltage ..................................................................................... 50 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current ....................................................................................................... 150 mA IB Base Current ............................................................................................................... 50 mA