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FM25040A pdf datasheet (4Kb FR
消耗积分:3 |
格式:rar |
大小:666 |
2008-09-23
马占云
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The FM25040A is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 45 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
Unlike serial EEPROMs, the FM25040A performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array in the
cycle after it has been successfully transferred to the
device. The next bus cycle may commence
immediately without the need for data polling. In
addition the product offers substantial write
endurance compared with other nonvolatile
memories. The FM25040A is capable of supporting
up to 1012 read/write cycles -- far more than most
systems will require from a serial memory.
These capabilities make the FM25040A ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25040A provides substantial benefits to users
of serial EEPROM, in a hardware drop-in
replacement. The FM25040A uses the high-speed
SPI bus which enhances the high-speed write
capability of FRAM technology. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 45 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
Unlike serial EEPROMs, the FM25040A performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array in the
cycle after it has been successfully transferred to the
device. The next bus cycle may commence
immediately without the need for data polling. In
addition the product offers substantial write
endurance compared with other nonvolatile
memories. The FM25040A is capable of supporting
up to 1012 read/write cycles -- far more than most
systems will require from a serial memory.
These capabilities make the FM25040A ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25040A provides substantial benefits to users
of serial EEPROM, in a hardware drop-in
replacement. The FM25040A uses the high-speed
SPI bus which enhances the high-speed write
capability of FRAM technology. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
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